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| GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm * * * * Third-generation IGBT Enhancement mode type High speed: tf = 0.30 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 20 30 60 155 150 -55 to 150 Unit V V A W C C JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C1C temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 4.6 g reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TOSHIBA GT30J101 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT30J101 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = 15 V, RG = 43 (Note1) Min 5.0 Typ. 2.1 2200 0.12 0.40 0.15 0.70 Max 500 1.0 8.0 2.7 Unit nA mA V V pF 0.30 s 0.81 C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT30J301 -VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE 10% Eoff Eon 2 2006-11-01 GT30J101 IC - VCE 100 20 Common emitter Tc = 25C Common emitter Tc = -40C VCE - VGE 80 VCE (V) Collector-emitter voltage 20 15 13 12 Collector current IC (A) 16 60 12 40 8 60 4 20 30 IC = 10 A 0 0 4 8 12 16 20 20 VGE = 10 V 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter Tc = 25C 20 Common emitter Tc = 125C VCE - VGE VCE (V) 16 VCE (V) Collector-emitter voltage 16 Collector-emitter voltage 12 12 8 60 30 8 20 4 IC = 10 A 0 0 4 8 12 16 20 30 60 4 20 IC = 10 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter VCE = 5 V 4 Common emitter VGE = 15 V 3 VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) (A) 80 60 50 40 30 Collector current IC 60 2 20 10 40 20 Tc = 125C 0 0 25 -40 12 16 20 1 IC = 5 A 4 8 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2006-11-01 GT30J101 Switching time 3 ton, tr - RG 10 Switching time Common emitter VCC = 300 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C ton, tr - IC (s) 1 0.5 0.3 tr Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C 10 30 100 300 1000 (s) ton 3 Switching time ton, tr Switching time ton, tr 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.1 0.05 0.03 3 0.01 0 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) Switching time 3 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C toff, tf - RG 10 5 3 Switching time Common emitter VCC = 300 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C toff, tf - IC Switching time toff, tf (s) 1 0.5 0.3 Switching time toff, tf (s) toff 1 0.5 0.3 toff tf 0.1 0.05 0.03 0.1 tf 0.05 0.03 3 10 30 100 300 1000 0.01 0 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) Switching loss 10 Eon, Eoff - RG 10 Eon Switching loss Common emitter VCC = 300 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C Note2 Eon, Eoff - IC Eon, Eoff (mJ) 3 Eoff 1 Eon, Eoff (mJ) 3 Eon 1 0.3 Eoff Switching loss 0.3 0.1 0.03 1 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C Note2 3 10 30 100 300 1000 Switching loss 0.1 0.03 0.01 0 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) 4 2006-11-01 GT30J101 C - VCE 10000 500 Common emitter VCE, VGE - QG 20 VCE (V) (pF) Cies 1000 16 Collector-emitter voltage Capacitance C 300 200 VCE = 100 V 200 8 100 Common emitter VGE = 0 30 f = 1 MHz Tc = 25C 10 0.3 1 3 10 30 100 Coes 100 4 Cres 300 1000 0 0 20 40 60 80 0 100 Collector-emitter voltage VCE (V) Gate charge QG (nC) Safe operating area 100 IC max (pulsed)* 50 IC max (continuous) 30 10 5 3 *: Single nonrepetitive pulse Tc = 25C 0.5 Curves must be derated 0.3 1 linearly with increase in temperature. 3 10 DC operation 10 ms* 100 100 s* 50 s* 50 30 Reverse bias SOA (A) (A) Collector current IC Collector current IC 1 ms* 10 5 3 1 0.5 0.3 Tj < 125C = VGE = 15 V RG = 43 3 10 30 100 300 1000 3000 0.1 1 30 100 300 1000 3000 0.1 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 10 2 Rth (t) - tw Transient thermal impedance Rth (t) (C/W) 10 1 10 0 10 -1 -2 -3 Tc = 25C 10 10 10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Pulse width tw (s) 5 2006-11-01 Gate-emitter voltage 300 300 12 VGE (V) 3000 RL = 10 400 Tc = 25C GT30J101 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01 |
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